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On-Wafer Large-Signal Transistor Characterization from 70–110 GHz

February 15 2021 Maury Microwave and Teledyne Technologies have co-authored an application note regarding characterizing advanced transistor technologies using high-power high-gamma on-wafer hybrid-active waveguide vector receiver load pull, featured in the February 2021 edition of the Microwave Journal. Article “On-Wafer, Large-Signal Transistor Characterization from 70–110 GHz Using an Optimized Load-Pull Technique” introduces the challenges related […]

February 15 2021

Maury Microwave and Teledyne Technologies have co-authored an application note regarding characterizing advanced transistor technologies using high-power high-gamma on-wafer hybrid-active waveguide vector receiver load pull, featured in the February 2021 edition of the Microwave Journal.

Article “On-Wafer, Large-Signal Transistor Characterization from 70–110 GHz Using an Optimized Load-Pull Technique” introduces the challenges related to performing traditional passive load pull measurements for mmW transistor technologies, and a revolutionary hybrid-active solution to overcome these challenges.

The ability to benchmark the performance of semiconductor technologies using small periphery devices, quickly and accurately, can reduce development cost and expedite time to market. This can now be achieved using hybrid-active vector receiver load-pull measurements that enable E- and W-Band device characterization up to gamma magnitudes of 1 at the device-under-test (DUT) reference plane.

Maury Microwave Application Note 5A-073 “On-Wafer, Large-Signal Transistor Characterization from 70–110 GHz Using an Optimized Load-Pull Technique” is available for download here.

The original Microwave Journal article can be seen here.

A video demonstration of high-power high-gamma on-wafer hybrid-active waveguide vector receiver load pull can be seen here.