AUTHORS: John Sevic, MSEE, Robert Baeten, Gary R. Simpson and Michael B. Steer
PUBLICATION HISTORY: First published in the 46th ARFTG Conference Digest; Fall 1995, and reprinted by permission in this format with revisions September 2000.
ABSTRACT: Large-signal adjacent-channel power ratio load-pull contours of a GaAs MESFET and a GaAs MEMT excited by p/4-DQPSK modulation are demonstrated for the first time using an automated load-pull system. It is shown that in general there is only a weak relationship between two-tone third-order intermodulation and adjacent-channel power ratio for the (Japanese) Personal Digital Cellular standard.