MT2000: Double Pulse Load Pull for Trapping Characterization of GaN Transistors

ABSTRACT: GaN HEMT power amplifiers used in radar, wireless infrastructure, and pulsed RF systems exhibit pronounced dynamic behavior driven by charge trapping effects. Conventional CW or single‑pulse Load Pull techniques often fail to capture this behavior under realistic operating conditions. RF Double Pulse Load Pull separates RF stress conditioning from performance measurement by using an RF pre‑pulse to define the large‑signal operating point (LSOP), thereby establishing a controlled trapping and thermal state prior to RF characterization. This application note describes how the Maury Microwave MT2000 platform enables repeatable, trapping‑aware Load Pull measurements that closely reflect real‑world pulsed and high peak‑to‑average RF operation.