AUTHORS: Steve Dudkiewicz, Eng. – Maury Microwave Corporation
PUBLICATION HISTORY: Originally presented by the author at a technical session of the 2nd International IEEE Conference on Microwaves, communications, Antennas and Electronic Systems (IEEE COMCAS 2009) 10 November 2009. Reprinted in this form with permission of IEEE November 2009.
ABSTRACT: For the first time ever, a commercially available pulsed-bias pulsed-RF harmonic load pull system is being offered for high power and wide band-gap devices. Pulsing DC bias in conjunction with pulsing RF reduces slow (long-term) memory effects by minimizing self-heating and trapping, giving a more realistic observance of transistor operating conditions. IV, S-Parameter and Load Pull measurements taken under pulsed-bias pulsed-RF conditions give more accurate and meaningful results for high-power pulsed applications.