Using Pulsed IV Measurements to Improve GaN Device Modeling and Validation

ABSTRACT: Accurate IV measurements are essential for understanding semiconductor device behavior and extracting parameters for compact and behavioral models. However, the measurement conditions themselves can influence the observed response. Pulsed IV uses short-duration bias pulses to help minimize these effects and support measurements under quasi-isothermal, or approximately constant-temperature, conditions. This application note examines the importance of pulsed IV characterization, key measurement considerations, and the capabilities of the Maury PIV Series and InsightPro™, followed by a practical GaN device measurement example.