Load pull allows engineers to evaluate how a device performs by varying the load impedance presented to the device under test (DUT). But what happens when a high-power GaN device…

Engineers rely on IV measurements to accurately characterize the electrical behavior of semiconductor devices – but what if the measurement process itself affects the results? During conventional DC IV characterization,…

GaN power devices used in radar, wireless infrastructure, and pulsed RF systems can behave differently under dynamic operating conditions than under steady-state measurement. Charge trapping following large-signal RF stress can…

Explore advanced solutions for load pull, pulsed IV, satellite link emulation, VNA calibration, EMC immunity, counter-UAS testing, and real-time RF power measurement at Booth B30, ExCel London. What does it…

Checking the mechanical dimensions before mating ensures all coaxial connectors in a test setup are operating within their specified tolerances. In addition to positioning and alignment, the depth of both…

Accurately characterizing RF devices often requires testing beyond standard 50 Ω conditions, as performance depends on the impedance presented to the device. To evaluate this behavior, engineers use load pull…